Tutorial Submission Deadline Extended to Aug. 15th, 2022
Digest Submission Deadline Extended to July 25th, 2022
Call for Papers for IEEE PEAC 2022 Released!
Advances in High-Voltage Conversion-Ratio Step-Up Isolated DC-DC Converters with SiC Power Semiconductor Devices
Prof. Saijun Mao, Fudan University
High-voltage conversion-ratio step-up isolated DC-DC converters have been widely used in industrial application such as electrostatic precipitation, medical X-ray, DC grid, as well as pulsed power supply. This tutorial focuses the recent advances of high-voltage conversion-ratio step-up isolated DC-DC converters. The tutorial starts with the introduction of high frequency high-voltage conversion-ratio step-up isolated DC-DC converters including the basics, development history, the state-of-the-art technologies and future trends. Key enabling technologies for performance improvement are summarized. The opportunities and challenges of SiC devices for the high-voltage conversion-ratio step-up isolated DC-DC converters are presented. Secondly, the HV architectures are classified and evaluated in detailed. Then the characterization and modelling of SiC MOSFET, and comprehensive design considerations of high-speed gate driver solution for the SiC power stage are given. The analysis of rectifier device technologies for the voltage multiplier is provided. The generic steady-state circuit modeling methodologies and output voltage sharing technologies are introduced. Finally, the technology demonstrator and prototype experimental results of 300kHz~500kHz 50kW 140kV output DC-DC converter are provided. The audience will be the entry level and intermediate university students and engineers in industry who are interested in DC-DC converter, SiC devices, and high voltage power supply technologies.
Saijun Mao received the B.S. and M.S. degrees from Nanjing University of Aeronautics and Astronautics, Nanjing, China, the Ph.D. degree from Delft University of Technology, Delft, the Netherlands, all in electrical engineering. From 2006 to 2017, he was a senior engineer and project leader with the GE Global Research Center, Shanghai, China. He was also with the Electrical Power Processing group in the department of Electrical Sustainable Energy at the Delft University of Technology, Delft, the Netherlands as a Ph.D. Researcher since December 2014. He was the Vice President of Shanghai Lingang Power Electronics Research Institute, and Principal Engineer in Leadrive Technology (Shanghai) Co., Ltd. He is now a Research Fellow in Fudan University, China. His research interests include wide-bandgap power semiconductor devices-based power conversion systems, high frequency high voltage generator systems, as well as harsh environment power conversion and packaging. He has published more than 50 conference and journal papers. He holds over 50 issued patents and pending patent applications. He received one IEEE Best Paper award. He received more than 15 awards, including annual technology excellence award, annual technology excellence team award and top inventor award in GE Global Research Center.